2SK1657 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR SWITCHING

SMD Type
MOSFET
Product specification
2SK1657
Features
Directly driven by Ics having a 3V power supply.
Has low gate leakage current
IGSS= 5nA MAX.@VGS= 3.0V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
30
7
100
200
200
150
-55 to +150
Unit
V
V
mA
mA
mW
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Marking
Marking
G19
Symbol
Testconditons
IDSS VDS=30V,VGS=0
IGSS VGS= 3.0V,VDS=0
VGS(off) VDS=3.0V,ID=1 A
Yfs VDS=3.0V,ID=10mA
VGS=2.5V,ID=10mA
RDS(on)
VGS=4.0V,ID=10mA
Ciss
Coss VDS=3.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=10mA,VGS(on)=3V,RL=300
,VDD=3.0V,RG=10
tf
Min Typ Max Unit
1.0
A
5.0 nA
0.9 1.2 1.5 V
20 40
ms
25 45
18 25
15
pF
10
pF
1.5
pF
95
ns
360
ns
150
ns
150
ns
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