2SK1399 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

SMD Type
MOSFET
Product specification
2SK1399
Features
Can be driven by a 3.0-V power source
Not necessary to consider driving current because of it is high input
impedance
Possible to reduce the number of parts by omitting the bias resistor
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
50
7.0
100
200
200
150
-55 to +150
Unit
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=50V,VGS=0
IGSS VGS= 7.0V,VDS=0
VGS(off) VDS=3.0V,ID=1 A
Yfs VDS=3.0V,ID=10mA
VGS=2.5V,ID=10mA
RDS(on)
VGS=4.0V,ID=10mA
Ciss
Coss VDS=3.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=20mA,VGS(on)=3V,RL=150
,VDD=3.0V,RG=10
tf
Min Typ Max Unit
10
A
5.0 A
0.9 1.2 1.5 V
20 38
ms
22 40
14 20
8
pF
7
pF
3
pF
15
ns
100
ns
30
ns
35
ns
Marking
Marking
G12
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