2SK1284 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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Product specification
2SK1284
Features
Low on-state resistance
RDS(on) 0.32 .@VGS=10V,ID=2A
RDS(on) 0.40 @VGS=4V,ID=2A
Low Ciss Ciss=500pF TYP.
Built-in G-S Gate Protection Diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol
Rating
Unit
VDSS
100
V
VGSS
20
V
ID
3.0
A
ID
12
A
2.0
W
PD
1.0
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=100V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=10V,ID=2A
VGS=10V,ID=2A
RDS(on)
VGS=4.0V,ID=2A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=2A,VGS(on)=10V,RL=25
,VDD=50V,RG=10
tf
Min Typ Max Unit
10
A
10 A
1.0
2.5 V
2.4
s
0.26 0.32
0.32 0.40
500
pF
160
pF
20
pF
40
ns
55
ns
500
ns
120
ns
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