2SK1273 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SMD Type
TransistIoCrs
Product specification
2SK1273
Features
Directly driver by Ics having a 5V power source.
Has low on-satate resistance
RDS(on)=1.00 MAX.@VGS=4.0V,ID=0.5A
RDS(on)=0.65 MAX.@VGS=10V,ID=0.5A
Not necessary to consider driving current because
of its high input impedance.
Possible to reduce the number of parts by omitting the biasresistor.
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 ³
0.48+0.1
-0.1
0.53+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 50%
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
2.0
A
ID
4.0
A
PD
2.0
W
Tch
150
Tstg
-55 to +150
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
1 Gate
1¹.^. S^Bo^au^serce
2 Drain
2².^. D^Cr^oa^lli^en^ctor
3³³.^. G^SEma^ot^uie^itrtcere
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=60V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=10V,ID=0.5A
VGS=4.0V,ID=0.5A
RDS(on)
VGS=10V,ID=0.5A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=0.5A,VGS(on)=10V,RL=50
,VDD=25V,RG=10
tf
Min Typ Max Unit
10
A
10 A
1.0 1.7 2.5 V
0.4
s
0.31 1.00
0.24 0.65
220
pF
105
pF
16
pF
15
ns
35
ns
380
ns
120
ns
Marking
Marking
NA
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