2SK1152S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon N-Channel MOSFET

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Product specification
2SK1152S
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 s, duty cycle 1%
Symbol
Rating
Unit
VDSS
500
V
VGSS
30
V
ID
1.5
A
ID
6
A
PD
20
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
VDSS ID=10mA,VGS=0
VGSS ID= 100 A,VDS=0
IDSS VDS=400V,VGS=0
IGSS VGS= 25V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=20V,ID=1A
RDS(on) VGS=10V,ID=1A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=1A,VGS(on)=0,RL=30
tf
Min Typ Max Unit
500
V
30
V
100
A
10 A
2.0
3.0 V
0.6 1.1
s
4.0 6.0
160
pF
45
pF
5
pF
5
ns
10
ns
20
ns
10
ns
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