2SK1133 Datasheet, PDF (1/1 Pages) NEC – N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

Features
Directly driven by Ics having a 5V power source.
Not necessary to consider driving current because of
its high input impedance.
Possible to reduce the number of parts by omitting the biasresistor.
Product specification
2SK1133
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 50%
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
50
7.0
100
200
200
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=50V,VGS=0
IGSS VGS= 7V,VDS=0
VGS(off) VDS=5.0V,ID=1 A
Yfs VDS=5.0V,ID=20mA
RDS(on) VGS=4V,ID=20mA
Ciss
Coss VDS=5.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=0,VDD=5V,f=1MHz
tf
Unit
V
V
mA
mA
mW
Min Typ Max Unit
-10
A
10 A
1.0 1.7 2.0 V
20 40
ms
16 50
7
pF
6
pF
2
pF
6
ns
25
ns
36
ns
35
ns
Marking
Marking
G11
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