2SJ647 Datasheet, PDF (1/2 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

Product specification
2SJ647
DESCRIPTION
The 2SJ647 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ647 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
ORDERING INFORMATION
PART NUMBER
2SJ647
Remark Marking: H22
PACKAGE
SC-70 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−20
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) ^Note1
Total Power Dissipation ^Note2
VGSS
m12
V
ID(DC)
m0.4
A
ID(pulse)
m1.6
A
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm² x 1.1 mm.
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.
http://www.twtysemi.com
[e-mail]
4008-318-123
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