2SJ621 Datasheet, PDF (1/2 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

SMD Type
Product specification
2SJ621
DESCRIPTION
The 2SJ621 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A)
RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ621
Marking: XG
SC-96 (Mini Mold Thin Type)
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16^{+–00..016}
3
1
2
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–12
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8.0
V
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
m3.5
A
ID(pulse)
m12
A
Total Power Dissipation (TA = 25°C)
PT1
0.2
W
Total Power Dissipation (TA = 25°C) ^Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2