 English |
|
|
|
|
|
|
|
| 2SJ575 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Switching | |||
| |||
|
SMD Type
Product specification
2SJ575
Features
⢠Low on-resistance
RDS =2.8 ⦠typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 ⦠typ. (VGS = -4 V , ID = -50 mA)
⢠4 V gate drive device.
⢠Small package (MPAK)
Outline
MPAK
3
D
3
2
G
1
S
1
2
1. Source
2. Gate
3. Drain
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123 1 of 2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese