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2SJ574 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Switching
SMD Type
Product specification
2SJ574
Features
• Low on-resistance
RDS = 1.1 Ω typ. (VGS = -10 V , ID = -150 mA)
RDS = 2.2 Ω typ. (VGS = -4 V , ID = -150 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3
D
3
2
G
1
S
1
2
1. Source
2. Gate
3. Drain
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