2SJ557 Datasheet, PDF (1/2 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

SMD Type
Product specification
2SJ557
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16^{+–00..016}
3
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
1
2
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ557
3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
–20 / +5
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±2.5
A
ID(pulse)
±10
A
Total Power Dissipation
Total Power Dissipation ^Note2
PT1
0.2
W
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: XB
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board, t ≤ 5 sec.
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