2SJ501 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

SMD Type
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Product specification
2SJ501
Package Dimensions
unit:mm
2091A
[2SJ501]
0.4
0.16
3
0 to 0.1
1 0.95 0.95 2
1.9
2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=–1mA, VGS=0
VDS=–20V, VGS=0
VGS=±8V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–300mA
ID=–300mA, VGS=–4V
ID=–50mA, VGS=–2.5V
1 : Gate
2 : Source
3 : Drain
Ratings
Unit
–20 V
±10 V
–0.5 A
–2.0 A
0.25 W
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min typ max
–20
V
–10 µA
±10 µA
–0.5
–1.5 V
0.2
1.0
S
420 600 mΩ
630 1000 mΩ
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4008-318-123
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