2SJ463A Datasheet, PDF (1/2 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Product specification
2SJ463A
DESCRIPTION
The 2SJ463A is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ463A has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5 V power source.
• Low Gate Cut-off Voltage.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS
–30
V
Gate to Source Voltage
VGSS
+20
V
Drain Current (DC)
ID(DC)
+0.1
A
Drain Current (pulse)
ID(pulse)
+0.4 ^Note
A
Total Power Dissipation PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
Package Drawings (unit: mm)
2.1 ±0.1
1.25 ±0.1
2
1
3
Marking
Equivalent Circuit
Gate
Drain
Electrode
Connection
1. Source
2. Gate
3. Drain
Internal Diode
Gate Protect
Diode
Source
Marking : H21
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2