2SD999 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
Features
World standard miniature package:SOT-89.
Low collector saturation voltage.
Excellent dc current gain linearity.
TransistIoCrs
Product specification
2SD999
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *
Total power dissipation
Junction temperature
Storage temperature
* Pulse Test PW 10ms, Duty Cycle
50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
5
V
IC
1
A
IC
1.5
A
PT
2.0
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = 30 V, IE = 0 A
IEBO VEB = 5.0 V, IC = 0 A
VCE = 1.0 V, IC = 100 mA
hFE
VCE = 1.0 V, IC = 1.0A
VCE(sat) IC = 1.0 A, IB = 0.1A
VBE(sat) IC = 1.0 A, IB = 0.1A
VBE VCE = 6.0 V, IC = 10 mA
fT VCE = 6.0 V, IE = -10 mA
Cob VCB = 6 V, IE = 0, f = 1.0 MHz
hFE Classification
Marking
hFE
CM
90 180
CL
135 270
CK
200 400
Min Typ Max Unit
100 nA
100 nA
90 200 400
50 140
0.21 0.4 V
1 1.2 V
600 630 700 mV
130
MHz
22
pF
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