2SD992-Z Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR MP-3

SMD Type
TransistIoCrs
Product specification
2SD992-Z
Features
Low VCE(sat).
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
2
A
Collector Current (pulse) *
ICP
3
A
Total power dissipation
PT
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pulse Test PW 10ms, Duty Cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = 20 V, IE = 0
VCE = 0.5 V, IC = 0.1 A
hFE
VCE = 0.5 V, IC = 2.0 A
VCE(sat) IC = 2.0 A, IB = 40 mA
VBE(sat) IC = 2.0 A, IB = 40 mA
Min Typ Max Unit
10 nA
35
200
50
0.3 0.5 V
0.95 1.5 V
hFE Classification
Marking
hFE
N
35 80
M
60 120
L
80 120
K
100 200
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