2SD882-R Datasheet, PDF (1/1 Pages) Micro Commercial Components – NPN Silicon Plastic-Encapsulate Transistor

Product specification
2SD882-R 2SD882-Y
2SD882-O 2SD882-GR
Features
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Capable of 1.25Watts of Power Dissipation.
• Collector-current 3.0A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55^OC to +150^OC
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
V_(BR)CBO
V(BR)EBO
ICBO
I_CEO
I_EBO
Collector-Emitter Breakdown Voltage
(I_C=10mAdc, I_B=0)
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=40Vdc, I_E=0)
Collector Cutoff Current
(V_CE=30Vdc, I_B=0)
Emitter Cutoff Current
(V_EB=6.0Vdc, I_C=0)
ON CHARACTERISTICS
30
---
Vdc
40
---
Vdc
6.0
---
Adc
---
1.0
uAdc
---
1.0 uAdc
---
1.0 uAdc
h_FE-1
h_FE-2
V_CE(sat)
VBE(sat)
fT
DC Current Gain
(I_C=1.0Adc, V_CE=2.0Vdc)
DC Current Gain
(I_C=100mAdc, V_CE=2.0Vdc)
Collector-Emitter Saturation Voltage
(I_C=2.0Adc, I_B=0.2Adc)
Base-Emitter Saturation Voltage
(I_C=2.0Adc, I_B=0.2Adc)
Transition Frequency
(V_CE=5.0Vdc, I_C=0.1Adc, f=10MHz)
60
400
---
32
---
---
---
0.5
Vdc
---
2.0 Vdc
50
---
MHz
CLASSIFICATION OF HFE
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
NPN Silicon
Plastic-Encapsulate
Transistor


A
K
N
D
E


M
B


1 23




L
G


C
F
Q












L
M
N
Q
J
PIN 1.
EMITTER
PIN 2.
COLLECTOR
PIN 3.
BASE
DIMENSIONS
 


0.291
0.307
0.417
0.433
0.602
0.618
4
1
0.118
0.126
0.026
0.034
0.046
0.054
0.090TYP
0.098
0.114
0.083
0.091
0.000
0.012
0.043
0.059
0.018
0.024



7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
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