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| 2SD794 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON POWER TRANSISTORS | |||
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Product specification
TO-126C Plastic-Encapsulate Transistors
2SD794/794A TRANSIS TOR (NPN)
FEATURES
TO- 126C
z High Voltage and Large Current Capacity
z Complementary to 2SB744,2SB744A
MAXIMUM RATINGS (Ta=25 â unless otherwise noted)
Symbol ParDPHWHU
Value8QLW
VCBO
Collector-Base Voltage
70
V
Collector-Emitter Voltage 2SD794
45
VCEO
V
2SD794A
60
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
3
A
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
1
W
150
â
-55 to +150
â
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHAR ACTERISTICS (Ta= 25 â unless otherwise specified
)
Parameter
Symbol Test conditions
Min Typ Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100µA,IE=0
70
V
Collector-emitter breakdown voltage
IC=1mA,IB=0
V(BR)CEO
2SD794 45
2SD794A 60
V
Emitter-base breakdown voltage
V(BR)EBO IE=100µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=45V,IE=0
1
µA
Emitter cut-off current
IEBO
VEB=3V,IC=0
1
µA
DC current gain
hFE(1)
hFE(2)
VCE=5V,IC=20mA
VCE=5V,IC=0.5A
30
60
320
Collector-emitter saturation voltage
VCE(sat) IC=1.5A,IB=0.15A
2
V
Base-emitter saturation voltage
VBE(sat) IC=1.5A,IB=0.15A
2
V
Transition frequency
fT
VCE=5V,IC=100mA
60
MHz
Collector output capacitance
CLASSIFIC ATION OF h FE(2)
Rank
Range
Cob
R
60-120
VCB=10V,IE=0,f=1MHz
Q
100-200
40
pF
P
160-320
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