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2SD602A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial Planar Type | |||
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Product specification
SOT-23 Plastic-Encapsulate Transistors
2SD602A TRANSISTOR (NPN)
SOTâ23
FEATURES
ï¬ Low Collector to Emitter Saturation Voltage
ï¬ Mini Type Package
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
5
IC
Collector Current
500
PC
Collector Power Dissipation
200
RÎJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
Collector cut-off current
ICBO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1) *
hFE(2) *
VCE=10V, IC=0.15A
VCE=10V, IC=0.5A
Collector-emitter saturation voltage
VCE(sat)* IC=0.3A, IB=0.03A
Transition frequency
fT
VCE=10V,IC=0.05A, f=200MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
Q
85â170
XQ
R
120â240
XR
Min Typ Max Unit
60
V
50
V
5
V
0.1
µA
0.1
µA
85
340
40
0.6
V
200
MHz
15
pF
S
170â340
XS
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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