2SD601A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

SMD Type
TransistIoCrs
Product specification
2SD601A
Features
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
100
mA
ICP
200
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base current
Collector-emitter current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
Testconditons
VCBO IC = 20 ìA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 20 V, IE = 0 A
ICEO VCE = 10 V, IB = 0 A
hFE VCE = 10 V, IC = 2 mA
VCE(sat) IC = 100 mA, IB = 10 mA
fT VCB = 10 V, IE = -2 mA , f = 200 MHz
Cob VCB = 10V , IE = 0 , f = 1.0MHz
NV ^{VCE = 10V, IC = 1mA, GV = 80dB}
Rg = 100kW, Function = FLAT
Min Typ Max Unit
60
V
50
V
7
V
0.1 ìA
100 ìA
160
460
0.1 0.3 V
150
MHz
3.5
pF
110
mV
hFE Classification
Marking
hFE
ZQ
160 260
ZR
210 340
ZS
290 460
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1