2SD596 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

SMD Type
TransistIoCrs
Product specification
2SD596
Features
Micro package.
High dc current gain. hFE:200TYP. (VCE=1V, IC=100mA)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
5
V
IC
700
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base to emitter voltage *
Collector saturation voltage *
Output capacitance
Gain bandwidth product
* Pulsed: PW 350 ìs, duty cycle 2%
hFE Classification
Marking
Rank
hFE
1
110 180
2
135 220
Symbol
Testconditons
ICBO VCB = 30 V, IE = 0
IEBO VEB = 5.0 V, IC = 0
hFE VCE = 1.0 V, IC = 100 mA
VBE VCE = 6.0 V, IC = 10 mA
VCE(sat) IC = 700 mA, IB = 70 mA
Cob VCB = 6.0 V, IE = 0, f = 10 MHz
fT VCE = 6.0 V, IE = -10 mA
Min Typ Max Unit
100 nA
100 nA
110 200 400
600 640 700 mV
0.22 0.6 V
12
pF
170
MHz
DV
3
170 270
4
200 320
5
250 400
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