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| 2SD2583 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
2SD2583 TRANSISTOR (NPN)
TO â 126
FEATURES
z Low VCE(sat)
z High DC Current Gain
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
30
6
5
1
125
150
-55~+150
1. EMITTER
2. COLLECTOR
3. BASE
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=6V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=2V, IC=1A
VCE=2V, IC=4A
Collector-emitter saturation voltage
VCE(sat)1
VCE(sat)2
IC=1A,IB=0.05A
IC=2A,IB=0.1A
VCE(sat)3
IC=4A,IB=0.2A
Base-emitter saturation voltage
VBE(sat)
IC=2A,IB=0.1A
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
Transition frequency
fT
VCE=10V,IC=50mA
Min Typ Max Unit
30
V
30
V
6
V
0.1 μA
0.1 μA
150
600
50
0.15 V
0.25 V
0.5
V
1.5
V
77
pF
120
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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