2SD2470 Datasheet, PDF (1/1 Pages) Rohm – High-gain Amplifier Transistor (32V, 0.3A)

Product specification
TO-92S Plastic-Encapsulate Transistors
2SD2470 TRANSISTOR (NPN)
FEATURES
z Low Saturation Voltage
TO-92S
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
3. BASE
V_CBO
Collector-Base Voltage
15
V
V_CEO
Collector-Emitter Voltage
10
V
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current –Continuous
5
A
P_C
Collector Power Dissipation
400
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=50μA , I_E=0
15
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA, I_B=0
10
Emitter-base breakdown voltage
V_(BR)EBO I_E=50μA, I_C=0
8
Collector cut-off current
I_CBO
V_CB=10V, I_E=0
Emitter cut-off current
I_EBO
V_EB=8V, I_C=0
DC current gain
h_FE
V_CE=2V, I_C=2A
270
Collector-emitter saturation voltage
V_CE(sat) I_C=3A,I_B=0.1A
Transition frequency
f_T
V_CE=6V, I_C=50mA,f=100MHz
Collector output capacitance
C_ob
V_CB=10V,I_E=0,f=1MHz
Typ Max Unit
V
V
V
0.1
μA
0.5
μA
820
0.5
V
170
MHz
30
pF
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