2SD2457 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

SMD Type
Transistors
Product specification
2SD2457
Features
High collector-emitter voltage (Base open) VCEO.
Low collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff current
Collector-emitter cutoff current
Emitter-base cutoff current
Collector-base voltage
Collector-emitter voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Rating
Unit
VCBO
50
V
VCEO
40
V
VEBO
5
V
IC
3
A
ICP
1.5
A
PC
1
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = 20 V, IE = 0
ICEO VCE = 10 V, IB = 0
IEBO VEB = 5 V, IC = 0
VCBO IC = 1 mA, IE = 0
VCEO IC = 2 mA, IB = 0
hFE VCE = 5 V, IC = 1 A
VCE(sat) IC = 1.5 A, IB = 0.15 A
VBE(sat) IC = 2 A, IB = 0.2 A
fT VCB = 5 V, IE = -0.5 A, f = 200 MHz
Cob VCB = 20 V, IE = 0, f = 1 MHz
hFE Classification
Marking
Rank
hFE
Q
80 160
1Y
R
120 220
Min Typ Max Unit
1 ìA
100 ìA
10 ìA
50
V
40
V
80 120 220
1
V
1.5 V
150
MHz
45
pF
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