2SD2359 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

SMD Type
Transistors
Product specification
2SD2359
Features
Low collector-emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
20
V
VEBO
5
V
IC
1.2
A
ICP
1
A
PC
1
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 14 V, IE = 0
VCBO IC = 10 ìA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
hFE VCE = 2 V, IC = 100 mA
VCE(sat) IC = 500 mA, IB = 10 mA
fT VCB = 6 V, IE = -50 mA, f = 200 MHz
Cob VCB = 6 V, IE = 0, f = 1 MHz
Min Typ Max Unit
1 ìA
20
V
20
V
5
V
200
800
0.11 0.2 V
100
MHz
23
pF
Marking
Marking
1O
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