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2SD2318 Datasheet, PDF (1/1 Pages) Rohm – High-current gain Power Transistor(60V, 3A)
SMD Type
TransistIoCrs
Product specification
2SD2318
Features
High DC current gain.
Low saturation voltage.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
Junction temperature
Storage temperature
* Pw=100ms.
Tc = 25
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
hFE Classification
Rank
hFE
U
560 1200
V
820 1800
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
80
60
6
3
4.5
4.5
1
15
150
-55 to +150
Unit
V
V
V
A
A(Pulse)*
A
W
W
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=80V
IEBO VEB=6V
VCE(sat) IC=2 A, IB=0.05A
VBE(sat) IC=2 A, IB=0.05A
hFE VCE=4V, IC=0.5A
fT VCE=5V, IE= -0.2A, f=10MHz
Cob VCB=10V, IE=0A, f=1MHz
Min Typ Max Unit
80
V
60
V
6
V
100 ìA
100 ìA
1.0 V
1.5 V
560
1800
50
MHz
60
pF
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