2SD2228 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

SMD Type
TransistIoCrs
Product specification
2SD2228
Features
High dc current.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
25
V
VCEO
16
V
VEBO
6
V
Ic
500
mA
PT
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base to emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = 16 V, IE = 0
IEBO VEB = 6.0 V, IC = 0
hFE VCE = 1.0 V, IC = 100 mA
VCE(sat) 1 IC = 100 mA, IB = 10 mA
VCE(sat) 2 IC = 500 mA, IB = 20 mA
VBE VCE = 1.0 V, IC = 10 mA
fT VCE = 3.0 V, IE = -100 mA
Cob VCB = 10 V, IE = 0 , f = 1.0 MHz
hFE Classification
Marking
hFE
D42
110 240
D43
190 320
D44
270 400
D45
350 600
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
100 nA
100 nA
100 200 600
45 100 mV
200 300 mV
600 650 700 mV
50
MHz
15 pF
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