2SD2226K Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – General Purpose Transistor

SMD Type
TransistIoCrs
Product specification
2SD2226K
Features
High DC current gain.
High emitter-base voltage.
Low saturation voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage *
DC current transfer ratio *
Output capacitance *
Transition frequency
* Measured using pulse current.
hFE Classification
Marking
Rank
hFE
BJ
V
W
820 1800 1200 2700
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
12
V
0.15
IC
A
0.2 *
PC
0.2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC=10ìA
BVCEO IC=1mA
BVEBO IE=10ìA
ICBO VCB=50V
IEBO VEB=12V
VCE(sat) IC/IB=50mA/5mA
hFE VCE=5V, IC=1mA
fT VCE=5V, IE= -10mA, f=100MHz
Cob VCB=5V, IE=0, f=1MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
60
V
50
V
12
V
0.3 ìA
0.3 ìA
0.3 V
820
2700
250
MHz
3.5
pF
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