2SD2211 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (160V , 1.5A)

SMD Type
■ Features
● High breakdown voltage.
● _{Low collector output capacitance.}
● _{High transition frequency .}
TransistIoCrs
Product specification
2SD2211
SOT- 89
4.50±0.1
1.80±0.1
Unit:mm
1.50 ±0.1
123
0.48±0.1
0.53±0.1
0.44±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Pa ra met er
S y mbo l
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VE BO
Collector Current to -Continuous
IC
-Pulse (Note 1)
Collector Dissipation -Continuous
Pc
- Pulse (Note 2)
Junction Temperature
TJ
Storage Temperature
Tst g
Notes: 1. Pw=200ms , duty=1/2
2. When mounted on a 40 x 40 x 0.7mm ceramic board.
R ati ng
1 60
1 60
5
1.5
3.0
0.5
2.0
1 50
-55 to 150
■ Electrical Characteristics Ta = 25℃
P aram ete r
Collector-base breakdown voltage
S ym bo l
Te st co ndi tons
VCBO Ic=50uA ,IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V CEO
VE BO
I CBO
IC= 1 mA , IB=0
IE= 50 uA ,IC=0
VCB=120 V , IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Transition frequency
IEB O
hFE
V CE( sa t)
V BE ( sa t)
Cob
fT
VEB=4V , IC=0
VCE= 5V, IC= 100mA
IC=1A, IB= 0.1A *
IC=1A, IB= 0.1A *
VCB = 10V , IE = 0A , f = 1MHz
VCE= 5 V, IE= -0.1A,f = 30MHz
* Measured using pulse current.
■ hFE Classification
M arki ng
hFE
DQ
120～ 270
DR
1 80～3 90
Unit
V
V
V
A
W
℃
℃
Min Typ Max Unit
160
V
160
V
5
V
1 uA
1 uA
120
390
2.0 V
1.5 V
20
pF
80
MHz
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