2SD2170 Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor(Motor, Relay drive) (90 , 2A)

Product specification
2SD2170
zFeatures
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
90 +20
−10
90 +20
−10
6
2
3
0.5 ^∗1
2 ^∗2
150
−55 to +150
∗1 Single pulse Pw=10ms,Duty=1/2
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
zExternal dimensions (Unit : mm)
ROHM : MPT3
EIAJ : SC-62
4.0
1.0
2.5 0.5
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
zPackaging specifications and hFE
zEquivalent circuit
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SD2170
MPT3
1k to 10k
DM
T100
1000
C
B
R1
R2
E : Emitter
B : Base
C : Collector
E
R1 3.5kΩ
R2 300 Ω
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
80
−
110
V IC=50µA
80
−
110
V IC=1mA
Collector cutoff current
ICBO
−
−
10
µA VCB=70V
Emitter cutoff current
IEBO
−
−
3
mA VEB=5V
Collector-emitter saturation voltage
VCE(sat)
−
−
1.5
V IC/IB=1A/1mA
∗1
DC current transfer ratio
hFE
1000
− 10000 − VCE=2V , IC=1A
∗1
Transition frequency
fT
−
80
−
MHz VCE=5V , IE=−0.1A , f=30MHz
∗2
Output capacitance
Cob
−
25
−
pF VCB=10V , IE=0A , f=1MHz
∗1 Measure using pulse current. ∗2 Transition frequency of the device.
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