2SD2150 Datasheet, PDF (1/1 Pages) Rohm – Low Frequency Transistor(20V, 3A)

SMD Type
TransistIoCrs
Product specification
2SD2150
Features
Low VCE(sat).
Excellent DC current gain characteristics.
NPN silicon transistor.
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12
0.48+0.1
-0.1
3
0.53+0.1
-0.1
Unit: mm
1.50^+0.1
-0.1
0.44+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
3.00+0.1
-0.1
Symbol
Rating
Unit
VCBO
40
V
VCEO
20
V
VEBO
6
V
IC
3
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
1. Base
2. Collector
3. Emiitter
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=30V
IEBO VEB=5V
VCE(sat) IC=2A, IB=0.1A
hFE VCE=2V, IC=0.1A
fT VCE=2V, IE= -0.5A, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
Min Typ Max Unit
40
V
20
V
6
V
0.1 ìA
0.1 ìA
0.2 0.5 V
180
560
290
MHz
25
pF
hFE Classification
Marking
Rank
hFE
CF
R
S
180 390
270 560
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