2SD2122S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial

SMD Type
TransistIoCrs
Product specification
2SD2122S
Features
Low frequency power amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation TC = 25
Junction temperature
Storage temperature
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
180
V
VCEO
120
V
VEBO
5
V
IC
1.5
A
ICP
3
A
PC
18
W
Tj
150
Tstg
-55 to +150
Unit: mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio *
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
* Pulse test
Symbol
Testconditons
V(BR)CBO IC = 1 mA, IE = 0
V(BR)CEO IC = 10 mA, RBE =
V(BR)EBO IE = 1 mA, IC = 0
ICBO VCB = 160 V, IE = 0
VCE = 5 V,IC = 150 mA
hFE
VCE = 5 V,IC = 500 mA
VCE(sat) IC = 500 mA,IB = 50 mA
VBE VCE = 5 V,IC = 150 mA
fT VCE = 5 V,IC = 150 mA
Cob VCB = 10 V, IE = 0,f = 1 MHz
hFE Classification
Marking
hFE
B
60 120
C
100 200
Min Typ Max Unit
180
V
120
V
5
V
10 ìA
60
200
30
1
V
1.5 V
180
MHz
14
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
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