2SD2121S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon NPN Epitaxial

SMD Type
TransistIoCrs
Product specification
2SD2121S
Features
Low frequency power amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation TC = 25
Junction temperature
Storage temperature
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
35
V
VCEO
35
V
VEBO
5
V
IC
2.5
A
ICP
3
A
PC
18
W
Tj
150
Tstg
-55 to +150
Unit: mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio *
Base to emitter voltage *
Collector to emitter saturation voltage *
* Pulse test.
Symbol
Testconditons
V(BR)CBO IC = 1 mA, IE = 0
V(BR)CEO IC = 10 mA, RBE =
V(BR)EBO IE = 1 mA, IC = 0
ICBO VCB = 35 V, IE = 0
VCE = 2 V,IC = 0.5 A
hFE
VCE = 2 V,IC = 1.5 A
VBE VCE = 2 V,IC = 1.5 A
VCE(sat) IC = 2 A,IB = 0.2 A
hFE Classification
Marking
hFE
B
60 120
C
100 200
D
160 320
Min Typ Max Unit
35
V
35
V
5
V
20 ìA
60
320
20
1.5 V
1.0 V
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4008-318-123
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