2SD2118 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

SMD Type
TransistIoCrs
Product specification
2SD2118
Features
Low VCE(sat).
Excellent DC current gain characteristics.
NPN silicon transistor.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
Junction temperature
Storage temperature
TC = 25
* Pw=10ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
50
20
6
5
10
10
1
10
150
-55 to +150
Unit
V
V
V
A (DC)
A(Pulse)*
A
W
W
1 Base
2 Collector
3 Emitter
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=40V
IEBO VEB=5V
VCE(sat) IC=4 A, IB=0.1A
hFE VCE=2V, IC=0.5A
fT VCE=6V, IE= -50mA, f=100MHz
Cob VCB=20V, IE=0A, f=1MHz
Min Typ Max Unit
50
V
20
V
6
V
0.5 ìA
0.5 ìA
0.3 1.0 V
120
390
150
MHz
30
pF
hFE Classification
Rank
hFE
Q
120 270
R
180 390
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