2SD2114 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Product specification
SOT-23 Plastic-Encapsulate Transistors
2SD2114 TRANSISTOR (NPN)
FEATURES
z High DC current gain.
z High emitter-base voltage.
z Low V_{CE (sat)}.
MARKING: BBV,BBW
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
25
20
12
0.5
0.25
150
-55~150
Unit
V
V
V
A
W
℃
℃
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
output capacitance
Symbol
Test conditions
Min
V_(BR)CBO
I_C=10μA,I_E=0
25
V_(BR)CEO I_C =1mA, I_B=0
20
V_(BR)EBO
I_E=10μA, I_C=0
12
I_CBO
V_CB=20 V, I_E=0
I_EBO
V_EB=10V,I_C=0
h_FE
V_CE=3V, I_C=10mA
820
V_CE(sat)
I_C= 500mA, I_B=20 mA
f_T
V_CE=10V, I_C=50mA
f=100MHz
C_ob
V_CB=10V,I_E=0,f=1MHz
Typ Max Unit
V
V
V
0.5 μA
0.5 μA
2700
0.4
V
350
MHz
8
pF
CLASSIFICATION OF h_FE
Rank
Range
http://www.twtysemi.com
V
820-1800
[e-mail]
W
1200-2700
4008-318-123
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