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2SD1999 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor | |||
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SMD Type
TransistIoCrs
Product specification
2SD1999
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between base and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
25
V
VCEO
20
V
VEBO
6
V
IC
4
A
ICP
6
A
PC
1.5
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Symbol
Testconditons
IcBO VCB = 20V , IE = 0
VCE = 2V , IC = 0.5A
hFE
VCE = 2V , IC = 3A
fT VCE = 2V , IC = 0.5A
Cob VCB = 10V , f = 1MHz
VCE(sat) IC = 3A , IB = 150mA
VBE(sat) IC = 3V , IB = 150mA
V(BR)CBO IC = 10ìA , IE = 0
IC = 10ìA , RBE =
V(BR)CEO
IC = 10mA , RBE =
VF IF = 0.5A
RBE
Min Typ Max Unit
1.0 ìA
70
50
200
MHz
45
pF
0.25 0.5 V
1.5 V
25
V
25
V
20
1.5 V
1.5
kÃ
Marking
Marking
DN
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sales@twtysemi.com
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