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2SD1998 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor | |||
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SMD Type
TransistIoCrs
Product specification
2SD1998
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between collector and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
40
V
VCEO
30
V
VEBO
6
V
IC
3
A
ICP
5
A
PC
1.5
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Marking
Marking
DM
Symbol
Testconditons
IcBO VCB = 30V , IE = 0
VCE = 2V , IC = 0.5A
hFE
VCE = 2V , IC = 2A
fT VCE = 2V , IC = 0.5A
Cob VCB = 10V , f = 1MHz
VCE(sat) IC = 2A , IB = 100mA
VBE(sat) IC = 2V , IB = 100mA
V(BR)CBO IC = 10ìA , IE = 0
IC = 10ìA , RBE =
V(BR)CEO
IC = 10mA , RBE =
VF IF = 0.5A
RBE
Min Typ Max Unit
1.0 ìA
70
50
100
MHz
40
pF
0.2 0.5 V
1.5 V
40
V
40
V
30
1.5 V
0.8
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