2SD1997 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
TransistIoCrs
Product specification
2SD1997
Features
Contains diode between collector and emitter.
Low saturation voltage.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
40
30
6
3
5
1.5
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter on state voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Base resistance
Symbol
Testconditons
IcBO VCB = 30V , IE = 0
VCE = 2V , IC = 0.5A
hFE
VCE = 2V , IC =2A
fT VCE = 2V , IC = 0.5A
Cob VCB = 10V , f = 1MHz
VCE(sat) IC = 1A , IB = 50mA
VBE(ON) ICE = 2V , IC = 1A
V(BR)CBO IC = 10ìA , IE = 0
IC = 10ìA , RBE =
V(BR)CEO IC = 10mA , RBE =
VF IF = 0.5A
RBE
R1
Marking
Marking
DO
Unit
V
V
V
A
A
W
Min Typ Max Unit
1.0 ìA
70
50
100
MHz
40
pF
0.12 0.3 V
1
2
5
V
40
V
40
V
3
1.5 V
0.8
kÙ
120 160 200 Ù
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