2SD1994A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Product specification
TO-92 Plastic-Encapsulate Transistors
2SD1994A TRANSISTOR (NPN)
FEATURES
z Low Collector to Emitter Saturation Voltage
z Complementary Pair with 2SB1322A
z Allowing Supply with the Radial Taping
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
1
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
CLASSIFICATION OF h_FE
RANK
Q
RANGE
85-170
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1) ^*
h_FE(2) ^*
V_CE(sat) ^*
V_BE ^*
C_ob
f_T
Test conditions
I_C= 0.01mA,I_E=0
I_C=2mA,I_B=0
I_E=0.01mA,I_C=0
V_CB=20V,I_E=0
V_EB=5V,I_C=0
V_CE=10V, I_C=0.5A
V_CE=5V, I_C=1A
I_C=0.5A,I_B=0.05A
V_CE=0.5V, I_C=0.05A
V_CB=10V,I_E=0, f=1MHz
VCE=10V,IC= 0.05A, f=200MHz
R
120-240
Min Typ Max Unit
60
V
50
V
5
V
0.1
μA
0.1
μA
85
340
50
0.4
V
1.2
V
20
pF
200
MHz
S
170-340
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