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| 2SD1991A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
2SD1991A TRANSISTOR (NPN)
FEATURES
z High Foward Current Transfer Ratio hFE
z Low Collector to Emitter Saturation Voltage VCE(sat).
z Allowing Supply with the Radial Taping.
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25 â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
100
mA
PC
Collector Power Dissipation
400
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â uless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=2mA,IB=0
V(BR)EBO IE=10μA,IC=0
ICBO
VCB=20V,IE=0
IEBO
VEB=7V,IC=0
hFE(1) VCE=10V,IC=2mA
hFE(2) VCE=2V,IC=100mA
VCE(sat) IC=100mA,IB=10mA
fT
VCE=10V,IC=2mA,f=200MHz
Cob
VCB=10V,IE=0,f=1MHz
Min
Typ Max
Unit
60
V
50
V
7
V
1
μA
1
μA
160
460
90
0.3
V
150
MHz
3.5
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Q
160-260
R
210-340
S
290-460
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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