2SD1963 Datasheet, PDF (1/1 Pages) Rohm – Power transistor (50V, 3A)

SMD Type
Features
Low saturation voltage.
Excellent DC current gain characteristics.
TransistIoCrs
Product specification
2SD1963
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
50
V
VCEO
20
V
VEBO
6
V
IC
3
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
hFE Classification
Marking
Rank
hFE
DG
R
S
180 390
270 560
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=40V
IEBO VEB=5V
hFE VCE=2V, IC=0.5A
VCE(sat) IC=1.5 A, IB=0.15A
fT VCE=6V, IE= -50mA, f=100MHz
Cob VCB=20V, IE=0A, f=1MHz
Min Typ Max Unit
50
V
20
V
6
V
0.5 ìA
0.5 ìA
180
560
0.25 0.45 V
150
MHz
35
pF
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