2SD1950 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
TransistIoCrs
Product specification
2SD1950
Features
High dc current gain and good hFE.
Low collector saturation voltage.
High VEBO.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
2
A
Collector current (Pulse) *
IC
3
A
Total power dissipation
PT
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* PW 10ms, duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage
Base saturation voltage
Base to emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Testconditons
ICBO VCB = 30 V, IE = 0
IEBO VEB = 10 V, IC = 0
VCE = 5.0 V, IC = 1.0 A
hFE
VCE = 5.0 V, IC = 2.0 A
VCE(sat) IC = 1 A, IB = 10 mA
VBE(sat) IC = 1 A, IB = 10 mA
VBE VCE = 5.0 V, IC = 300 mA
fT VCE = 10 V, IE = -500 mA
Cob VCB = 10 V, IE = 0 , f = 1.0 MHz
hFE Classification
Marking
hFE
VM
800 1600
VL
1200 2400
VK
2000 3200
Min Typ Max Unit
100 nA
100 nA
800 1500 3200
400
0.18 0.3 V
0.83 1.2 V
600 660 700 mV
150 350
MHz
26 35 pF
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