2SD1898 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (80V, 1A)

SMD Type
IC
Product specification
2SD1898
Features
High VCEO, VCEO=80V .
High IC, IC=1A (DC) .
Good hFE linearity .
Low VCE (sat) .
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1. Pw=20ms.
*2. 40X40X0.7mm Ceramic board.
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Rating
Unit
VCBO
120
V
VCEO
80
V
VEBO
5
V
IC
1
A
IC (Pulse) *¹
2
A
PC
0.5
W
PC *²
2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=100V
IEBO VEB=4V
hFE VCE=3V,IC=0.5A
VCE(sat) IC=500mA,IB=20mA
fT VCE=10V, IE= -50mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
P
82 180
DF
Q
120 270
R
180 390
Min Typ Max Unit
120
V
80
V
5
V
1 ìA
1 ìA
82
390
0.15 0.4 V
100
MHz
20
pF
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