2SD1824 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

SMD Type
TransistIoCrs
Product specification
2SD1824
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
High emitter-base voltage VEBO
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
100
V
VCEO
100
V
VEBO
15
V
ICP
50
mA
IC
20
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
Testconditons
VCBO IC = 10 ìA, IE = 0
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 60 V, IE = 0
ICEO VCE = 60 V, IB= 0
hFE VCE = 10 V, IC = 2 mA
VCE(sat) IC = 10 mA, IB = 1 mA
fT VCB = 10 V, IE = -2 mA, f = 200 MHz
Min Typ Max Unit
100
V
100
V
15
V
0.1 ìA
1 ìA
400
1200
0.05 0.2 V
90
MHz
hFE Classification
Marking
Rank
hFE
1V
R
S
400 800
600 1200
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