2SD1819A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

SMD Type
TransistIoCrs
Product specification
2SD1819A
Features
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
ICP
200
mA
IC
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 20V, IE = 0
ICEO VCE = 10V, IB = 0
VCBO IC = 10ìA, IE = 0
VCEO IC = 2mA, IB = 0
VEBO IE = 10ìA, IC = 0
hFE VCE = 10V, IC = 2mA
VCE(sat) IC = 100mA, IB = 10mA
fT VCB = 10V, IE =-2mA, f = 200MHz
Cob VCB = 10V, IE = 0, f = 1MHz
hFE Classification
Marking
Rank
hFE
ZQ
Q
160 260
ZR
R
210 340
ZS
S
290 460
Min Typ Max Unit
0.1 ìA
100 ìA
60
V
50
V
7
V
160
460
0.1 0.3 V
150
MHz
3.5
pF
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