2SD1782K Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (80V, 0.5A)

SMD Type
TransistIoCrs
Product specification
2SD1782K
Features
Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA
High VCEO, VCEO=80V.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
80
V
VCEO
80
V
VEBO
5
V
IC
0.5
A
PC
0.2
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=2mA
BVEBO IE=50ìA
ICBO VCB=50V
IEBO VEB=4V
VCE(sat) IC/IB=500mA/50mA
hFE VCE=3V, IC=100mA
fT VCE=10V, IE= -50mA, f=100MHz
Cob VCB=10V, IE=0, f=1MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
80
V
80
V
5
V
0.5 ìA
0.5 ìA
0.2 0.5 V
120
390
120
MHz
7.5
pF
hFE Classification
Marking
Rank
hFE
AJ
Q
R
120 270
180 390
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1