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| 2SD1781 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Plastic Encapsulated Transistor | |||
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Product specification
SOT-23 Plastic-Encapsulate Transistors
2SD1781 TRANSISTOR (NPN)
FEATURES
z Very low VCE(sat). VCE(sat) <0.4 V (Typ.) (IC /IB = 500mA / 50mA)
z Complements to 2SB1197.
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
32
5
0.8
0.2
150
-55-150
Unit
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA,IC=0
ICBO
VCB=20V,IE=0
IEBO
VEB=4V,IC=0
hFE(1) VCE=3V,IC=100mA
VCE(sat) IC=500mA,IB=50mA
fT
VCE=5V,IC=50mA,f=100MHz
Cob
VCB=10V,IE=0,f=1MHz
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
120-270
AFQ
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Min Typ Max Unit
40
V
32
V
5
V
0.5 μA
0.5 μA
120
390
0.4 V
150
MHz
10
pF
R
180-390
AFR
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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