2SD1767 Datasheet, PDF (1/1 Pages) Rohm – Medium power transistor (80V, 0.7A)

SMD Type
Features
High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
Product specification
2SD1767
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1. Pw=10ms.
*2. 40X40X0.7mm Ceramic board.
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Forward current transfer ratio
Transition frequency
Output capacitance
Symbol
Rating
Unit
VCBO
80
V
VCEO
80
V
VEBO
5
V
IC
0.7
A
IC (Pulse) *¹
1
A
PC
0.5
W
PC *²
2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=2mA
BVEBO IE=50ìA
ICBO VCB=50V
IEBO VEB=4V
VCE(sat) IC=500mA,IB=50mA
hFE VCE=3V,IC=0.1A
fT VCE=10V, IE= -50mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
P
82 180
DC
Q
120 270
R
180 390
Min Typ Max Unit
80
V
80
V
5
V
0.5 ìA
0.5 ìA
0.2 0.4 V
82
390
120
MHz
10
pF
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