2SD1719 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

SMD Type
Transistors
Product specification
2SD1719
Features
High forward current transfer ratio hFE which has satisfactory linearity
High emitter-base voltage (Collector open) VEBO
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Collector power dissipation
Ta = 25
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
100
V
VCEO
60
V
VEBO
15
V
IC
6
A
ICP
12
A
IB
3
A
40
W
PC
1.3
W
Tj
150
Tstg
-55 to +150
Unit: mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-base cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE Classification
Rank
hFE
Q
300 1200
P
800 2000
Symbol
Testconditons
VCEO IC = 25 mA, IB = 0
ICBO VCB = 100 V,IE = 0
IEBO VEB = 15 V, IC = 0
hFE VCE = 4 V, IC = 1 A
VCE(sat) IC = 5 A, IB = 0.1 A
fT VCE = 12 V, IC = 0.5 A , f = 10 MHz
ton
tstg IC = 5 A,IB1 = -IB2 = 0.1 A, VCC = 50V
tf
Min Typ Max Unit
60
V
100 ìA
100 ìA
300
2000
0.5 V
30
MHz
0.3
ìs
1.5
ìs
0.6
ìs
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