2SD1616 Datasheet, PDF (1/2 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

2SD1616 / 2SD1616A
NPN Silicon Transistor
The 2SD1616 / 2SD1616A are designed for use in
driver and output stages of AF amplifier general
purpose application.
The transistor is subdivided into three groups R, O
and Y, according to its DC current gain
On special request, these transistors can be
manufactured in different pin configurations.
Product specification
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T_a = 25 ^OC)
Collector Base Voltage
2SD1616
2SD1616A
Collector Emitter Voltage
2SD1616
2SD1616A
Emitter Base Voltage
Collector Current (DC)
Collector Current (pulse)¹⁾
Power Dissipation
Junction Temperature
Storage Temperature Range
1) PW≦10ms, Duty Cycle≦50%
Symbol
Value
Unit
60
V_CBO
V
120
50
V_CEO
V
60
V_EBO
6
V
I_C
1
A
I_C
2
A
P_tot
0.75
W
T_j
150
℃
T_S
-55 to +150
℃
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