2SD1615 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

SMD Type
Features
World Standard Miniature Package.
Low VCE(sat) VCE(sat) = 0.15 V
Transistors
Product specification
2SD1615
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current (DC)
IC
1
A
Collector Current (pulse) *1
IC
2
A
Total power dissipation at 25 Ambient Temperature *2
PT
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* 1Pulse Test PW 10ms, Duty Cycle 50%.
*2 When mounted on ceramic substrate of 16 cm²X 0.7 mm
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
hFE Classification
Marking
hFE
GM
135 270
GL
200 400
Symbol
Testconditons
ICBO VCB = 60 V, IE = 0 A
IEBO VEB = 6.0 V, IC = 0 A
hFE VCE = 2.0 V, IC = 100 mA
VCE(sat) IC = 1 A, IB = 50 mA
VBE(sat) IC = 1 A, IB = 50 mA
VBE VCE = 2.0 V, IC = 50 mA
fT VCE = 2.0 V, IE = -100 mA
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
GK
300 600
Min Typ Max Unit
100 nA
100 nA
135 290 600
0.15 0.3 V
0.9 1.2 V
600
700 mV
80 160
MHz
19
pF
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